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Metastable Sic and SiGeC Alloys by Carbon Implantation and Solid Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

J. W. Strane ,
W. J. Edwards ,
J. W. Mayer ,
H. S. Stain ,
B. R. Lee ,
B. L. Doyle  and
B. T. Piorauz
J. W. Strane
Affiliation:
Cornell University, Ithaca, NY 14853
W. J. Edwards
Affiliation:
Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
CSSS, Arizona State University, Tempe, AZ 85287
H. S. Stain
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. R. Lee
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. L. Doyle
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
B. T. Piorauz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

We demonstrate the formation of metastable Si1-yCy and Si1-y-xGexCy alloys by C ion implantation and solid phase epitaxial regrowth. Carbon was introduced into Si and SiGe layers by 5, 12 and 25 keV implants to achieve nearly uniform profiles of 0.7 and 1.4 at.% C. The 0.7 at.% C specimens exhibit the highest quality epitaxial layers after SPE regrowth, whereas in higher C concentration specimens solid phase regrowth was impeded. The localized vibrational mode of C occupying substitutional lattice sites in the diamond lattice provides a signature of the metastable phase and is used to monitor the loss of stability due to precipitation of silicon carbide. The Sic and SiGeC alloys retained substitutional carbon during 30 minute isochronal anneals up to 850°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 609
Copyright
Copyright © Materials Research Society 1993

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References

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