Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-27T01:19:57.047Z Has data issue: false hasContentIssue false
  • English
  • Français

Metastability in Undoped Microcrystalline Silicon Thin Films Deposited by HWCVD

Published online by Cambridge University Press:  21 March 2011

S.K. Persheyev ,
K.A. O'Neill ,
S. Anthony ,
M.J. Rose ,
V. Smirnov  and
S. Reynolds
S.K. Persheyev
Affiliation:
Carnegie Laboratory of Physics, Electronic Engineering and Physics Division University of Dundee, Dundee, DD1 4HN, Scotland, UK.
K.A. O'Neill
Affiliation:
Carnegie Laboratory of Physics, Electronic Engineering and Physics Division University of Dundee, Dundee, DD1 4HN, Scotland, UK.
S. Anthony
Affiliation:
Carnegie Laboratory of Physics, Electronic Engineering and Physics Division University of Dundee, Dundee, DD1 4HN, Scotland, UK.
M.J. Rose
Affiliation:
Carnegie Laboratory of Physics, Electronic Engineering and Physics Division University of Dundee, Dundee, DD1 4HN, Scotland, UK.
V. Smirnov
Affiliation:
EPICentre, School of Computing and Advanced Technologies, University of Abertay Dundee, Dundee DD1 1HG, Scotland, UK.
S. Reynolds
Affiliation:
EPICentre, School of Computing and Advanced Technologies, University of Abertay Dundee, Dundee DD1 1HG, Scotland, UK.
Get access

Abstract

Films deposited by the Hot Wire CVD method were studied by means of dark conductivity, FTIR, Hydrogen Evolution, SEM and AFM surface characterization. Three types of metastability were observed: a) long term irreversible degradation due to oxidization processes on the film surface, b) reversible degradation determined by uncontrolled water adsorption, c) fast field switching effect in the film bulk.

Oxygen and hydrogen content and its bonding configurations have been analyzed by hydrogen evolution and infrared spectroscopy methods on the films deposited on glass substrates and silicon wafers subsequently. It has been found that metastable processes close to the film surface are stronger than in the bulk. The switching effect is the fast increase of charge carrier density observed on bottom chromium contacts under a condition of air admittance. We propose this effect is associated with morphology changes during film growth and electrical field induced by adsorbed atmospheric components on the film surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.10
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Persheyev, S.K., Goldie, D. M., Gibson, R. A. G., Rose, M. J., Anthony, S., Keeble, D. J., Robb, K., Main, C., Reynolds, S. and Zrinscak, I., Thin Solid Films 395 (2001) 130–133 Google Scholar
[2] Klein, S., Finger, F., Carius, R., Dylla, T., Rech, B., Grimm, M., Houben, L. and Stutzmann, M., Thin Solid Films 430 (2003) 202–207 Google Scholar
[3] Matsumura, H., Umemoto, H., Izumi, A., Masuda, A., Thin Solid Films 430 (2003) 7–14 Google Scholar
[4] Mahan, A.H., Solar Energy Materials & Solar Cells 78(2003) 299–327 Google Scholar
[5] Tanielian, M., Chatani, M., Fritzche, H., Smid, V. and Persans, P.D., J. Non-Cryst. Solids 35&36 (1980) 575–580 Google Scholar
[6] Solomon, I., in: Proc. Kyoto Sum. Ins., ed: Yonezawa, F. 33, 1981 Google Scholar
[7] Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S., Günes, M., IEE Proc. CDS 150, 300 (2003)Google Scholar
[8] Smirnov, V., Reynolds, S., Main, C., Finger, F., Carius, R., J. Non-Cryst. Solids (in press).Google Scholar
[9] Matsuda, A., ICAMS 20, The Mott Lecture, J. Non-Cryst. Solids (in press).Google Scholar
[10] Moutinho, H.R., Jiang, C.-S., Perkins, J., Xu, Y., Nelson, B.P., Jones, K.M., Romero, M.J., Al-Jassim, M.M., Thin Solid Films 430 (2003) 135–140 Google Scholar
[11] Kondo, M., Fujiwara, H., Matsuda, A., Thin Solid Films 430 (2003) 130–134 Google Scholar
[12] Jäntsch, O., J. Phys. Chem. Solids 26 (1965) 1233 Google Scholar