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Metal/Silicide Interactions in the Ti-Co-Si System.

Published online by Cambridge University Press:  25 February 2011

M. Setton ,
J. Van Der Spiegel ,
R. Madar  and
O. Thomas
M. Setton
Affiliation:
University of Pennsylvania, Department of Materials Science, Laboratory for Research on the Strucutre of Matter, 3231 Walnut Street, Philadelphia PA 19104.
J. Van Der Spiegel
Affiliation:
Department of Electrical Engineering, 200 S 33 rd Street, Philadelphia PA 19104.
R. Madar
Affiliation:
Laboratoire des Matériaux et du Génie Physique, ENSPG, B. P. 46, Domaine Universitaire, Saint Martin d’Heres, France.
O. Thomas
Affiliation:
Laboratoire des Matériaux et du Génie Physique, ENSPG, B. P. 46, Domaine Universitaire, Saint Martin d’Heres, France.
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Abstract

Confirming the results obtained for Ti-Co bilayers on Si and in accordance with the phase diagram, the high temperature formation and stability of three ternary silicides Ti0.75Co0.25Si2 (T phase), TiCoSi (E) and Ti4Co4Si7 (V) is reported. The Si rich T phase grows for Ti / CoSi2 and Co / TiSi2 structures. The tetragonal V compound is obtained by annealing Ti (400 Å) / Co (250 Å) / Si (900 Å) / SiO2 whereas orthorhombic TiCoSi is prepared using Ti / CoSi / Si3N4 samples.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 497
Copyright
Copyright © Materials Research Society 1990

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References

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