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Metallorganic Cheamcal Vapor Deposition (Mocvd) of Titanium-Based Ferroelectric Thin Films

Published online by Cambridge University Press:  21 February 2011

Warren C. Hendricks ,
Seshu B. Desu ,
Jie Si  and
Chien H. Peng
Warren C. Hendricks
Affiliation:
Virginia Polytechnic Institute & State University, Dept. of Materials Science and Engineering, Blacksburg, Virginia 24061
Seshu B. Desu*
Affiliation:
Virginia Polytechnic Institute & State University, Dept. of Materials Science and Engineering, Blacksburg, Virginia 24061
Jie Si
Affiliation:
Virginia Polytechnic Institute & State University, Dept. of Materials Science and Engineering, Blacksburg, Virginia 24061
Chien H. Peng
Affiliation:
Virginia Polytechnic Institute & State University, Dept. of Materials Science and Engineering, Blacksburg, Virginia 24061
*
*To whom all correspondence should be addressed
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Abstract

Using hot-walled metallorganic chemical vapor deposition (MOCVD), thin fihns of lead zirconate titanate (PZT), lead titanate (PbTiO3 or PT) and bismuth titanate (Bi4Ti3O12 or BiT) were successfully prepared. For each material, titanium ethoxide (Ti(C2H5O)4) was used as the precursor for the titanium source, while lead bis-tetramethylheptadione (Pb(thd)2), zirconium tetrakistetramethylheptadione (Zr(thd)4) and triphenyl bismuth (Bi(C6H5)3) were used as sources for lead, zirconium and bismuth, respectively. Dense, specular and highly transparent films were obtained for all three materials. Deposition conditions are given for each of the materials as well as the properties of the resulting films as determined by XRD, SEM and UV-VIS-NIR spectrophotometry. Ferroelectric properties are also given for the PZT and BiT films; for PZT (%Zr = 41; %Ti = 9) annealed at 600 °C, the spontaneous polarization, Ps, was 23 μC/cm2 and the coercive field, Ec, was 65 kV/cm; for BiT annealed at 550 °C, the spontaneous polarization, Ps, was 27 μC/cm2 and the coercive field, Ec, was 240 kV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 241
Copyright
Copyright © Materials Research Society 1993

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References

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