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Metal-Free Germanium-Induced Crystallization of Amorphous-Si on Glass

Published online by Cambridge University Press:  01 February 2011

A. Akhavan ,
L. Rezaee ,
J. Derakhshandeh ,
S. Mohajerzadeh  and
A. Goodarzi
A. Akhavan
Affiliation:
Thin Film Lab, Dep. of Elect. & Comp. Eng., University of Tehran, Tehran, IranEmail: smohajer@sun1.vlsi.uwaterloo.ca, ara_akh@yahoo.com
L. Rezaee
Affiliation:
Thin Film Lab, Dep. of Elect. & Comp. Eng., University of Tehran, Tehran, IranEmail: smohajer@sun1.vlsi.uwaterloo.ca, ara_akh@yahoo.com
J. Derakhshandeh
Affiliation:
Thin Film Lab, Dep. of Elect. & Comp. Eng., University of Tehran, Tehran, IranEmail: smohajer@sun1.vlsi.uwaterloo.ca, ara_akh@yahoo.com
S. Mohajerzadeh
Affiliation:
Thin Film Lab, Dep. of Elect. & Comp. Eng., University of Tehran, Tehran, IranEmail: smohajer@sun1.vlsi.uwaterloo.ca, ara_akh@yahoo.com
A. Goodarzi
Affiliation:
Thin Film Lab, Dep. of Elect. & Comp. Eng., University of Tehran, Tehran, IranEmail: smohajer@sun1.vlsi.uwaterloo.ca, ara_akh@yahoo.com
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Abstract

A metal-free germanium-induced crystallization technique is reported to realize poly-silicon films on glass at temperatures as low as 480°C. The reduction in crystallization temperature is achieved by using ultra-violet illumination during thermal treatment of the amorphous silicon layer. The annealed samples have been studied using SEM and XRD analyses. Also the electrical conductivity of samples with various annealing conditions has been examined. Conductivity of the samples annealed in the presence of ultra-violet exposure shows more than three orders of magnitude improvement compared to that of amorphous films. Samples treated without UV exposure do not show much enhancement. Size of poly-silicon grains is 0.3μm, as revealed using SEM study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.10
Copyright
Copyright © Materials Research Society 2002

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References

[1] Sameshima, T., Usui, S., Sekiya, M., IEEE Electron Device Letter 7, 276–278 (1986).Google Scholar
[2] Zellamar, K., Germain, P., Squelard, S., Bourgoin, J. C., Thomas, P. A., J. Appl. Physics 50, 6995 (1979).10.1063/1.325856Google Scholar
[3] Rezaee, L., Mohajerzadeh, S., khakifirooz, A., Haji, S., Asl, E. Soleimani, MRS Symp. Proc. 664, (2001).Google Scholar
[4] Lee, S. W., Joo, S. K., IEEE Electron Device Letter 17, (1996).Google Scholar
[5] Subremanian, V. and Saraswatt, K. C., IEEE Trans. Electron Devices 45, 1934 (1998).Google Scholar
[6] Subremanian, V., Toita, M., Ibrahim, N. R., Souri, S. J., Saraswat, K. C., IEEE Electron Device Letter 20, 341 (1999).Google Scholar