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Metal Rich Silicide Formation Between Thin Films of Vanadium and Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

P. A. Psaras ,
M. Eizenbergt  and
K. N. Tu
P. A. Psaras
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, N.Y. 10598
M. Eizenbergt
Affiliation:
Dept. of Materials Engineering and Solid State Institute, Technion, Israel Institute of Technology, Haifa 32000, Israel.
K. N. Tu
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, N.Y. 10598
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Extended abstract

The formation of silicides via a solid state reaction of silicon and transition metal thin film is characterized by the sequential appearance of the various compounds rather than the simultaneous formation of all possible compounds [1]. Thin films of refractory metals will form disilicides on a single crystal silicon substrate (unlimited supply of silicon) and since they are stable with silicon, no other silicides will form. This situation is illustrated in Fig. la) by the formation of VSi2 in the case of vanadium on silicon. On the other hand, which silicide will form in the case where there is an excess amount of refractory metal is unknown. The objective of this work was to study this case utilizing the vanadium silicon binary system [2].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 585
Copyright
Copyright © Materials Research Society 1985

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References

1. Tu, K.N. and Mayer, J.W., Chap. 10, “Thin Films Interdiffusion and Reactions”, ed. by Poate, J.M., Tu, K.N. and Mayer, J.W., John Wiley and Sons, New York, (1978).Google Scholar
2. Psaras, P.A., Eizenberg, M. and Tu, K.N., J. Appl. Phys., in press.Google Scholar
3. Chu, W.K., Mayer, J.W. and Nicolet, M.A., “Backscattering Spectrometry”, (Academic Press, New York, 1978).Google Scholar
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8. Nava, F., Psaras, P.A., Takai, H. and Tu, K.N., unpublished.Google Scholar