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Metal Induced Grain Growth in Germanium and Silicon Thin Films.

Published online by Cambridge University Press:  22 February 2011

C.R.M. Grovenor  and
D.A. Smith
C.R.M. Grovenor
Affiliation:
Dept. of Metallurgy and Science of Materials, Parks Road, Oxford
D.A. Smith
Affiliation:
IBM TJ Watson Research Centre, Yorktown Heights, NY.
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Abstract

Rapid grain growth has been induced in semiconductor films at relatively low temperatures by allowing contact with metals or metal/semiconductor eutectic melts. Mechanisms by which such enhanced grain growth can occur are discussed, and Diffusion Induced Boundary Migration has been shown to be a plausible explanation for the experimental observations from the Sn/Ge, Al/Ge and Au/Ge systems. Interface migration driven by the decrease in free energy during phase transformations however provides a better explanation of the large Si grains produced on heating the Au/Si samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 305
Copyright
Copyright © Materials Research Society 1984

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References

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