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MEMS SiGe Technologies for RF and Millimeterwave Communications

  • J. P. Busquére (a1) (a2), N. Do (a1), F. Bougriha (a1), P. Pons (a1), K. Grenier (a1), D. Dubuc (a1), H. Schumacher (a3), P. Abele (a3), A. Rydberg (a4), E. Ojefors (a4), P. Ancey (a2), G. Bouche (a2) and R. Plana (a1)...

Abstract

This paper shows the potentialities of merging the MEMS and micromachining with SiGe technologies in order to speed up the performances of next generation of front end in term of flexibility, reconfigurability and adaptability. MEMS technologies are presented based on Benzo-Cyclo-Butene (BCB) materials and Bulk Acoustic Wave (BAW) materials. Special attention is paid to ensure a full compatibility between IC and MEMS. We have shown that very innovative functions could be considered by using this MEMSIC concept.

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[1] Regis, M. et al “Noise behavior in SiGe devicesSolid State Electronics, 45, 18911897, 2001.
[2] Greenberg, D.R. et al “Noise performance of a low base resistance 200 GHz SiGe technology” in 2002 IEDM Technical digest, Dec 2002.
[3] Dubois, M.A. and Muralt, P.Stress and piezoelectric properties of aluminium nitride thin films deposited on metal electrodes by pulsed direct current reactive sputteringJ of Appl Phys, vol 89, (11), pp 63896395, 2001.
[4] Dubois, M.AThin film bulk acoustic wave resonators: a technology overview” in Proc of 4th MEMSWAVE Workshop, Toulouse July 2003, E3–E6. ISBN 2–907801–03–01.
[5] Robert, P. et al “integrated RF MEMS switch based on a combination of thermal and electrostatic actuation”, Transducers 03, vol 2, pp 17141717.
[6] Sadowy, J. et al “Advanced design of high linearity, low noise amplifier for WLAN using a SiGe BicMOS technologyTopical meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. 12–14 september 2001, pp. 131134.
[7] Schupener, G. et al “A 23 GHz Low Noise amplifier in SiGe Heterojunction Bipolar technology2001 RFIC Symposium, pp 177180.
[8] Li, Y., Bao, M., Ferndahl, M. and Cathelin, A “23 GHz front end in SiGe BiCMOS technology” In Proc of RFIC 2003, Philadelphia.

MEMS SiGe Technologies for RF and Millimeterwave Communications

  • J. P. Busquére (a1) (a2), N. Do (a1), F. Bougriha (a1), P. Pons (a1), K. Grenier (a1), D. Dubuc (a1), H. Schumacher (a3), P. Abele (a3), A. Rydberg (a4), E. Ojefors (a4), P. Ancey (a2), G. Bouche (a2) and R. Plana (a1)...

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