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Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices

  • R. G. Gateru (a1), J. M. Shannon (a1) and S. R. P. Silva (a1)

Abstract

Metal-semiconductor-metal (MSM) memory devices have been made in hydrogenated amorphous silicon carbide (a-SiCx:H). Switching in silicon-rich amorphous silicon alloys is believed to be related to the concentration of defects in the semiconductor material. We have used ion bombardment to introduce a controlled number of damage centres into amorphous silicon carbide. Both analog and digital switching behaviours are reported.

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1 r.gateru@surrey.ac.uk or rgateru@hotmail.com Tel: +44 (0) 1483 686088, Fax: +44 (0) 1483 689404

References

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Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices

  • R. G. Gateru (a1), J. M. Shannon (a1) and S. R. P. Silva (a1)

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