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Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices

Published online by Cambridge University Press:  11 February 2011

R. G. Gateru ,
J. M. Shannon  and
S. R. P. Silva
R. G. Gateru*
Affiliation:
Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
J. M. Shannon
Affiliation:
Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
S. R. P. Silva
Affiliation:
Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
*
1r.gateru@surrey.ac.uk or rgateru@hotmail.com Tel: +44 (0) 1483 686088, Fax: +44 (0) 1483 689404
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Abstract

Metal-semiconductor-metal (MSM) memory devices have been made in hydrogenated amorphous silicon carbide (a-SiCx:H). Switching in silicon-rich amorphous silicon alloys is believed to be related to the concentration of defects in the semiconductor material. We have used ion bombardment to introduce a controlled number of damage centres into amorphous silicon carbide. Both analog and digital switching behaviours are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.3
Copyright
Copyright © Materials Research Society 2003

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References

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