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Memory Effect in the Current-Voltage Characteristics of Diodes based on PEDOT:PSS

Published online by Cambridge University Press:  01 February 2011

Zhengchun Liu ,
Fengliang Xue ,
Yi Su  and
Kody Varahramyan
Zhengchun Liu
Affiliation:
Institute for Micromanufacturing, Louisiana Tech University 911 Hergot Ave, Ruston, LA 71272, U.S.A.
Fengliang Xue
Affiliation:
Institute for Micromanufacturing, Louisiana Tech University 911 Hergot Ave, Ruston, LA 71272, U.S.A.
Yi Su
Affiliation:
Institute for Micromanufacturing, Louisiana Tech University 911 Hergot Ave, Ruston, LA 71272, U.S.A.
Kody Varahramyan
Affiliation:
Institute for Micromanufacturing, Louisiana Tech University 911 Hergot Ave, Ruston, LA 71272, U.S.A.
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Abstract

Diodes were formed by intermediating a thin film of PEDOT:PSS between aluminum and heavily doped silicon. Both p-type and n-type Si substrates were used. Hysteresis loops were observed in their current-voltage (I-V) characteristics. A ‘state’ can be written by applying a voltage pulse to aluminum electrode. The state of the device can be read out from the current under a small probe voltage (0.3-0.6 V, to Al electrode). Appling +4.0 V induces a ‘low’ conductance state while applying -4.0 V switches the device back to the ‘high’ conductance state. The current difference between two states is up to 3 orders of magnitude. The space charge storage in the polymer is believed to be responsible for the memory effect. Upon positive voltage bias the charges are injected into the place near the Al/PEDOT:PSS interface. The charges are stored there and will resist subsequent charge injection, resulting in the ‘low’ conduction state. The redox reactions further reduce the conductance of the device. Negative bias can remove the stored charges and reverse the redox reactions, thus recover the device back to ‘high’ conduction state.

Keywords

PEDOT/PSSmemory effectcontacts
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I9.35
Copyright
Copyright © Materials Research Society 2005

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References

1 Turut, A. and Koleli, F., Journal of Applied Physics, 72, 818–819 (1992).Google Scholar
2 Chen, M., Nilsson, D., Kugler, T., and Bergren, M., Applied Physics Letters, 81, 2011–2013 (2002).Google Scholar
3 Huang, C. C., Meng, H. F., and Ho, G. K. et al, Applied Physics Letters, 84, 1195–1197 (2004).Google Scholar
4 Shaheen, S. E., Radspinner, R., and Peyghambarian, N. et al, Applied Physics Letters, 79, 2996–2998 (2001).Google Scholar
5 Lu, J., Pinto, N. J., and MacDiarmid, A.G., Journal of Applied Physics, 92, 6033–6037 (2002).Google Scholar
6 Möller, S., Perlov, C., Jackson, W., Taussig, C., and Forrest, S. R., Nature, 426, 166–169 (2003).Google Scholar
7 Möller, S., Forrest, S. R., Perlov, C., Jackson, W. and, Taussig, C., Journal of Applied Physics, 94, 7811–7819 (2003).Google Scholar
8 Smith, S. and Forrest, S. R., Applied Physics Letters, 84, 5019–5021 (2004).Google Scholar
9 Liu, Z., Su, Y. and Varahramyan, K., Materials Research Society Symposium Proceedings, 814, pp253–257(2004).Google Scholar
10 Jonsson, S.K.M., Salaneck, W.R., and Fahlman, M., Journal of Materials Research, 18, 1219–1226 (2003).Google Scholar
11 Majumdar, H. S., Bandyopadhyay, A., Bolognesi, A., and Pal, A. J., Journal of Applied Physics, 91, 2433–2437 (2002).Google Scholar
12 Johansson, T., Pettersson, L. A.A., Inganäs, O., Synthetic Metals, 129, 269–274 (2002)Google Scholar