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Melt Growth of ZnGeP2: Homogeneity Range and Thermochemical Properties

  • S. Fiechter (a1), R. H. Castleberry (a2), M. Angelov (a3) and K. J. Bachmann (a2)

Abstract

ZnGeP2 crystallized from the melt via horizontal gradient freezing shows the tendency to decompose into Ge and GeP when the equilibrium vapor pressure is not exactly controlled during the entire crystallization process. Using differential thermal analysis (DTA) it was found that ZnGeP2 has a truly congruent melting point of 1311 K. Adding small amounts of the elements and binaries in the ternary system Zn-Ge-P to stoichiometric ZnGeP2 a significant deflection of the liquidus curve was observed at the melting point of ZnGeP2- From DTA, X-ray diffractometry (XRD), photoluminescence (PL), transmission and conductivity measurements it was concluded that the melt grown material was highly compensated. The presence of a broad acceptor and donor band in the band gap could be associated with phosphorous and zinc point defects in the crystal lattice. It is assumed that the defect concentrations are of the order 1019 cm−3.

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1. Borshchevskii, A.S., and Shantsovoi, T.M., Inorg. Chem. 11, 1853 (1975).
2. Fiechter, S., Castleberry, R.H., Dietz, N. and Bachmann, K.J. in 7th Int. Symposium on Experimental Methods for Microgravity Materials Science, edited by. Schiffmann, R.A. and Andrews, J.B. (TMS, 1995) pp. 5568.
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5. Fiechter, S., Castleberry, R.H., Wood, G. and Bachmann, K.J. in 6th Int. Symposium on Experimental Methods for Microgravity Materials Science, edited by Schiffmann, R.A. and Andrews, J.B. (TMS, 1994) pp.93100.
6. Dietz, N., Tsveybak, I., Rudermann, W., Wood, G. and Bachmann, K.J., Appl. Phys. Lett. 65, 2759 (1994); see also contribution 07.7 of this conference and references therein.

Melt Growth of ZnGeP2: Homogeneity Range and Thermochemical Properties

  • S. Fiechter (a1), R. H. Castleberry (a2), M. Angelov (a3) and K. J. Bachmann (a2)

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