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Melt Growth of ZnGeP2: Homogeneity Range and Thermochemical Properties

Published online by Cambridge University Press:  10 February 2011

S. Fiechter ,
R. H. Castleberry ,
M. Angelov  and
K. J. Bachmann
S. Fiechter
Affiliation:
Department of Solar Energetics, Hahn Meitner Institute, Glienicker Str. 100, D-14109 Berlin, Germany, fiechter@hmi.de
R. H. Castleberry
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC, 27695
M. Angelov
Affiliation:
Institute for Physics, Technical University, D-98684 Ilmenau, Germany
K. J. Bachmann
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC, 27695
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Abstract

ZnGeP2 crystallized from the melt via horizontal gradient freezing shows the tendency to decompose into Ge and GeP when the equilibrium vapor pressure is not exactly controlled during the entire crystallization process. Using differential thermal analysis (DTA) it was found that ZnGeP2 has a truly congruent melting point of 1311 K. Adding small amounts of the elements and binaries in the ternary system Zn-Ge-P to stoichiometric ZnGeP2 a significant deflection of the liquidus curve was observed at the melting point of ZnGeP2- From DTA, X-ray diffractometry (XRD), photoluminescence (PL), transmission and conductivity measurements it was concluded that the melt grown material was highly compensated. The presence of a broad acceptor and donor band in the band gap could be associated with phosphorous and zinc point defects in the crystal lattice. It is assumed that the defect concentrations are of the order 1019 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 315
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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