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Mechanisms of Doping-Enhanced Superlattice Disordering and of Gallium Self-Diffusion in GaAs

Published online by Cambridge University Press:  26 February 2011

T. Y. Tan ,
U. Gösele  and
B. P. R. Marioton
T. Y. Tan
Affiliation:
also at Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
U. Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
B. P. R. Marioton
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
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Abstract

Recently available Ga-Al interdiffusion results in GaAs/AlAs superlattices allow to conclude that Ga self-diffusion in GaAs is carried by triply-negatively charged Ga vacancies under intrinsic and n-doping conditions. The mechanism of the Si enhanced superlattice disordering is the Fermi-level effect which increases the concentrations of the charged point defect species. For the effect of the p-dopants Be and Zn, the Fermi-level effect has to be considered together with dopant diffusion induced Ga self-interstitial supersaturation or undersaturation. Self-diffusion of Ga in GaAs under heavy p-doping conditions is governed by positively charged Ga self-interstitials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 605
Copyright
Copyright © Materials Research Society 1988

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References

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