Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-29T09:01:15.140Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanisms for the Deposition of Thin Metallic Films by Laser Driven Gas Phase Reactions

Published online by Cambridge University Press:  28 February 2011

T. R. Jervis ,
S. K. Menon ,
E. L. Joyce  and
D. W. Carroll
T. R. Jervis
Affiliation:
Materials Science and Technology Division, Mailstop E549, Los Alamo, National Labordtory, Los Alamos, NM 87545
S. K. Menon
Affiliation:
Materials Science and Technology Division, Mailstop E549, Los Alamo, National Labordtory, Los Alamos, NM 87545
E. L. Joyce
Affiliation:
Materials Science and Technology Division, Mailstop E549, Los Alamo, National Labordtory, Los Alamos, NM 87545
D. W. Carroll
Affiliation:
Materials Science and Technology Division, Mailstop E549, Los Alamo, National Labordtory, Los Alamos, NM 87545
Get access

Abstract

Gas phase processing rakes laser deposition over large areas possible but homogeneous nucleation of large atomic clusters must be avoided if films are to be produced. Clusters can be highly variable in size from a few atoms to significant fractions of a micrometer. If conditions do not allow for complete quenching of the clusters produced in the gas phase, these clusters can arrive at the substrate with sufficient energy to self sinter into homogeneous films which are substantially different from metallic films grown by thermal techniques. Using transmission electron microscopy (TEM), we have characterized the microstructure of thin metallic films deposited by laser breakdown chemical vapor deposition and identified a range of deposition conditions which can lead from powders to homogeneous polycrystalline films and mixed phase materials. Gas phase nucleation is dependent on reactant partial pressures and the gas phase quench rate which car be varied in part by adjusting the H2 content of the source gas. Manipulation of these parameters can vary powder size from about one micrometer to less than 2 nanometers. Variation of the quench rate during the deposition of polycrystalline films varies the grain size in the films. heating the substrate drastically changes the conditions under which the film is formed and as a consequence, can radically alter the microstructure of the film itself.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 159
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jervis, T. K. & Newkirk, L. R., J. Mat. Res. 1 420 (1986).Google Scholar
2. Emery, K., Boyer, P. K., Thompson, L. R., Solanki, R., Zarnani, R., & Collins, G. J., Proc. SPIE Int. Soc. Opt. Eng. 459 9 (1984).Google Scholar
3. Meunier, M., Gattuso, T. R., Adler, D., & Haggerty, J. S., Appl. Phys. Lett. 43 273 (1983).CrossRefGoogle Scholar
4. Henon, S. K. & Jervis, T. R., Scripta Met. 20 1519 (1986).Google Scholar
5. Radziemski, L. J., Cremers, D. A., & Niemczyk, T. M., Spectrochim. Acta 408 517 (1965).Google Scholar
6. Turkdogan, E. T., Physical Chemistry of High Temperature Technology, (Academic Press, NY, 1980).Google Scholar
7. Jervis, T. R. & Menon, S. K., Ultrafine Particle Formation by Laser Breakdown Chemical Vapor Deposition, Presented at the MRS Meeting, Symposium V, December, 1986 (unpublished).Google Scholar