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Mechanisms for Interstitial-Mediated Transient Enhanced Diffusion of N-type Dopants

Published online by Cambridge University Press:  01 February 2011

Scott Anthony Harrison ,
Thomas F. Edgar  and
Gyeong S. Hwang
Scott Anthony Harrison
Affiliation:
scotth@che.utexas.edu, University of Texas at Austin, Chemical Engineering, 4305 Duval St., #116, Austin, TX, 78751, United States, 512-294-3522, 512-475-7824
Thomas F. Edgar
Affiliation:
edgar@che.utexas.edu, University of Texas at Austin, Chemical Engineering, 1 University Station, Austin, TX, 78712, United States
Gyeong S. Hwang
Affiliation:
gshwang@che.utexas.edu, University of Texas at Austin, Chemical Engineering, 1 University Station, Austin, TX, 78712, United States
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Abstract

As silicon transistor dimensions scale down, transient enhanced diffusion of n-type dopants has become a major barrier toward achieving required junction depths for transistors. In this paper, we use density functional calculations to identify a pathway by which silicon interstitials can mediate As and P diffusion. We show that As-silicon interstitial and P-silicon interstitial pairs in the neutral and negative charge states diffuse via a mechanism in which the dopant is bond-centered at energy minima and threefold coordinated at the high energy saddle point during dopant migration. For both As-silicon interstitial and P-silicon interstitial pairs, we conclude that the neutral pairs will dominate under intrinsic conditions while the neutral and negatively charged pairs will both contribute under heavily doped extrinsic conditions.

Keywords

diffusionAsP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C02-10
Copyright
Copyright © Materials Research Society 2006

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