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Mechanism of Twin Formation in Excimer-laser-induced Lateral Solidification of Si Films

  • G.S. Ganot (a1), P.C. van der Wilt (a1), H.K. Effron (a1), B.A. Turk (a1), U.J. Chung (a1), A.M. Chitu (a1), A.B. Limanov (a1) and James S. Im (a1) (a2)...

Abstract

In this paper, we present experimental findings pertaining to the formation of twins in isolated single-crystal islands obtained via the dot-SLS method. Systematic characterization of the islands using EBSD reveals that Σ = 3 CSL twins constitute the predominant extended defect. Given this, the surface orientation of the seed and twinned regions are shown to be related by a 180° rotation about a <111> axis, and the orientation of the twinned area is apparently manifested in the inverse pole figure as a reflection across the {112} zone. By considering (1) the overall pattern of the twin boundaries within the islands, (2) that solidification proceeds via a facetted mode of growth and, (3) that intragrain-defect-free regions were obtained when the dot-SLS process was performed on a {100} surface-oriented seed, we suggest that these twins are most likely generated heterogeneously at the Si/SiO2interface during the ledge nucleation stage of rapid lateral solidification of the films.

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References

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1. van der Wilt, P.C., Turk, B.A., Limanov, A.B., Chitu, A.M., Im, James S., Proc. SPIE 6106 (2006).
2. Sposili, R.S. and Im, James S., Appl. Phys. Lett. 69, 2864 (1996).
3. Turk, B.A., Ph.D. Thesis, Columbia University (2005).
4. Ellis, W.C. and Treuting, R.G., J. Metals 189, 53 (1951).
5. Randle, V., The Measurement of Grain Boundary Geometry, Institute of Physics Publishing, Philadelphia, USA (1993).
6. Drowley, C.I., Reid, G.A., Hull, R., Appl. Phys. Lett. 52, 546 (1988).

Keywords

Mechanism of Twin Formation in Excimer-laser-induced Lateral Solidification of Si Films

  • G.S. Ganot (a1), P.C. van der Wilt (a1), H.K. Effron (a1), B.A. Turk (a1), U.J. Chung (a1), A.M. Chitu (a1), A.B. Limanov (a1) and James S. Im (a1) (a2)...

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