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Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure

  • Masato Koyama (a1), Kyoichi Suguro (a2), Chie Hongo (a3), Mitsuo Koike (a3), Yuichi Kamimuta (a3), Masamichi Suzuki (a3) and Akira Nishiyama (a1)...

Abstract

In this paper, the mechanisms of the suppression of Zr-silicide formation in poly-Si/ZrON/interfacial-layer/Si structure at 1000°C annealing are discussed in detail. It was demonstrated that gaseous SiO desorption, which played a dominant role in the silicide formation in the case of the ZrO2/SiO2/Si, was completely inhibited in the ZrON/interfacial-layer/Si structure. In addition, we have found that an ultrathin interfacial SiON layer between poly-Si and ZrON stabilized the interface. Consequently, we concluded that the effective nitrogen incorporation into top/bottom interfacial SiON layers with our process was responsible for the superior thermal stability of the stack.

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Mechanism of the Suppression of Zr Silicide Formation in Poly-Si/ZrON/ZrSiON/Si Structure

  • Masato Koyama (a1), Kyoichi Suguro (a2), Chie Hongo (a3), Mitsuo Koike (a3), Yuichi Kamimuta (a3), Masamichi Suzuki (a3) and Akira Nishiyama (a1)...

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