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The Mechanism of Low pH Colloidal Silica-based Oxide Slurries

Published online by Cambridge University Press:  01 February 2011

Michael L. White ,
Lamon Jones  and
Richard Romine
Michael L. White
Affiliation:
Michael_White@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
Lamon Jones
Affiliation:
lamon_jones@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
Richard Romine
Affiliation:
richard_romine@cabotcmp.com, Cabot Microelectronics, Aurora, Illinois, United States
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Abstract

The mechanism of oxide polishing at low pH in the presence of an organic cation is discussed. The role of the cation is thought to involve increasing the nucleophilicity of the silanolate active site on the particle surface by lowering the hydration state. Additionally, the activation energy of the reaction may be lowered by charge attraction between the particle and wafer surface and by increased hydrophobic interactions.

Keywords

additivesadsorptionCMP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-E04-07
Copyright
Copyright © Materials Research Society 2010

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