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Mechanism of Laser-Enhanced Etching of Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
Recent studies of the laser-enhanced etching of silicon by XeF2 have demonstrated that rapid reaction rates are attributable to intrinsic effects of above band gap radiation, that is, that photo-generated charge carriers influence the etching reaction. The mechanism proposed to account for this is described.
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- Copyright © Materials Research Society 1984
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