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Mechanism of Iron Gettering by Polycrystalline Silicon Film in P-Type Czochralski (CZ) Silicon

Published online by Cambridge University Press:  26 February 2011

Kamal K. Mishra
Kamal K. Mishra*
Affiliation:
MEMC Electronic Materials, Inc., 501 Pearl Drive, St. Peters, Mo 63376
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Abstract

Iron gettering in p-type CZ silicon at 600C has been investigated using deep level transient spectroscopy(DLTS), and the surface photovoltage(SPV) method. A quantitative analysis of the gettering kinetics of iron using the polycrystalline silicon film is presented for the first time. Depth profiles of iron concentration indicated a sharp gradient in the Fe concentration near the polycrystalline silicon/substrate interface. Concurrent decrease in the minority carrier diffusion length was also observed in the same region. The majority of iron gettering from the bulk silicon was found to be associated with the enhancement of the internal gettering.

The presence of small oxygen precipitates/nuclei generated by prolonged heat treatment at 600C was found to prevent regeneration of FeB pairs at the room temperature. On the other hand, large precipitates formed at lOOOC do not influence the diffusion or the recombination of Fei with B to form FeB pairs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 321
Copyright
Copyright © Materials Research Society 1995

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