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Mechanism for the Diffusion of Zinc in Gallium Arsenide

Published online by Cambridge University Press:  25 February 2011

K. B. KAHEN
K. B. KAHEN*
Affiliation:
Corporate Research Laboratory, Eastman Kodak Company, Rochester, NY 14650-2011
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Abstract

The anomalous shape of the Zn diffusion profile in GaAs has been quantitatively explained. The interchange between interstitial Zn and substitutional Zn is assumed to occur via the Ga vacancies. These vacancies are proposed to be either neutral or singly ionized, depending on the position of the Fermi level. In addition, two physical phenomena are proposed. Substitutional Zn thermally generates interstitial Zn-Ga vacancy pairs and there is pairing between the donor, interstitial Zn and the acceptor, substitutional Zn. This pairing leads to the interstitial Zn diffusivity being a decreasing function of the substitutional Zn concentration. The model is found to be in good agreement with the experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 681
Copyright
Copyright © Materials Research Society 1990

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