Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-23T09:11:53.881Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanically strained a-Si:H AMOLED driver circuits

Published online by Cambridge University Press:  17 March 2011

P. Servati ,
S. Tao ,
E. Horne ,
D. Striakhilev ,
K. Sakariya  and
A. Nathan
P. Servati
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo Waterloo, Ontario, CanadaN2L 3G1
S. Tao
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo Waterloo, Ontario, CanadaN2L 3G1
E. Horne
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo Waterloo, Ontario, CanadaN2L 3G1
D. Striakhilev
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo Waterloo, Ontario, CanadaN2L 3G1
K. Sakariya
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo Waterloo, Ontario, CanadaN2L 3G1
A. Nathan
Affiliation:
Electrical and Computer Engineering Department, University of Waterloo Waterloo, Ontario, CanadaN2L 3G1
Get access

Abstract

This paper examines the variations in performance of amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel driver circuits for active-matrix organic light-emitting diode (AMOLED) displays, which are subject to compressive or tensile mechanical strain. The external strain is induced by bending of the TFT substrate, and is measured by the observed changes in resistance of in-situ strain gauges. Mechanical strain impacts the performance of the circuit in terms of its drive current, which may be attributed to mobility and Fermi energy shifts in the individual TFTs. The effect of strain-induced shifts in the TFTs as a function of strain orientation (longitudinal or transverse) with respect to direction of current flow is also examined. Our measurements show that the variation in the drain current of a longitudinally oriented TFT can be as much as ∼ 1.5% for strains as high as 10−3. Proper layout and circuit design can suppress the effect of strain-induced shifts, and should be taken into consideration when designing stable TFT driver circuits for mechanically flexible AMOLED displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I6.13
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sazonov, A., Nathan, A., and Striakhilev, D., J. Non-Cryst. Solids 266–269, 1329 (2000).Google Scholar
2. Striakhilev, D., Sazonov, A., and Nathan, A., J. Vac. Sci. and Technol. A 20, 1087 (2002).Google Scholar
3. Collins, L., IEE Rev. 49, 42 (2003).Google Scholar
4. Lumelsky, V. J., Shur, M. S., and Wagner, S., IEEE Sens. J. 1, 41 (2001).Google Scholar
5. Yang, C.-S., Smith, L. L., Arthur, C. B., and Parsons, G. N., J. Vac. Sci. Technol. B 18, 683 (2000).Google Scholar
6. Gleskova, H., Wagner, S., Gaŝparík, V., and Kováĉ, P., Appl. Surf. Sci. 175–176, 12 (2001).Google Scholar
7. Meitine, M. and Sazonov, A., Mat. Res. Soc. Symp. Proc. 769, H6.6.1 (2003).Google Scholar
8. Suo, Z., Ma, E. Y., Gleskova, H., and Wagner, S., Appl. Phys. Lett. 74, 1177 (1999).Google Scholar
9. Hsu, P. I., Huang, M., Xi, Z., Wagner, S., Suo, Z., and Sturm, J. C., J. Appl. Phys. 95, 705 (2004).Google Scholar
10. Rajanna, K. and Mohan, S., Phys. Status Solidi A 105, K181 (1988).Google Scholar
11. Arlt, G., J. Appl. Phys. 49, 4273 (1978).Google Scholar
12. Servati, P., Striakhilev, D., and Nathan, A., IEEE Trans. Electron Devices 50, 2227 (2003).Google Scholar
13. Gleskova, H., Wagner, S., Soboyejo, W., and Suo, Z., Mat. Res. Soc. Proc. 715, A3.4.1 (2002).Google Scholar
14. Spear, W. E. and Heintze, M, Phil. Mag. B 54, 343 (1986).Google Scholar
15. Sakariya, K., Servati, P., Striakhilev, D., and Nathan, A., Mat. Res. Soc. Symp. Proc. 736, 207 (2002).Google Scholar
16. Servati, P., Prakash, S., Nathan, A., and Py, C., J. Vac. Sci. and Technol. A 20, 1374 (2002).Google Scholar