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Measurement of Viscoelastic Stress Relief in Patterned Silicon-on-Insulator Composite Structures With Raman Spectroscopy

Published online by Cambridge University Press:  22 February 2011

T. J. Létavic ,
E. W. Maby ,
R. J. Gutmann  and
J. Petruzzello
T. J. Létavic
Affiliation:
Department of Electrical and Computer Engineering and the Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
E. W. Maby
Affiliation:
Department of Electrical and Computer Engineering and the Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
R. J. Gutmann
Affiliation:
Department of Electrical and Computer Engineering and the Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corporation, 345 Scarborough Road, Briarcliff Manor, New York 10510
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Abstract

Raman spectroscopy has been utilized to measure room-temperature residual strain in the active device layer of laser-recrystallized silicon-on-insulator (SOI) composite structures. The SOI composite structures were fabricated on synthetic fused-silica substrates, and the composites contained a phosphosilicate glass (PSG) layer to provide high-temperature stress relief. Conventional masking and etching techniques were used to selectively pattern the polycrys-talline silicon layer into isolated square islands prior to recrystallization. The biaxial in-plane stress in recrystallized films was calculated from the measured strain-induced first-order Stokes Raman wavenumber shifts, and the results indicate that 200- μm-square recrystallized silicon islands have significantly lower in-plane stress values than continuous recrystallized silicon films. These measurements provide a preliminary confirmation of the dependence of the time constant for viscoelastic stress relief on the in-plane pattern dimension.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 201
Copyright
Copyright © Materials Research Society 1992

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References

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