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MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES

  • D. V. LANG (a1), R. PEOPLE (a1), J. C. BEAN (a1) and A. M. SERGENT (a1)

Abstract

We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of GexSi1−x grown on {001} Si by molecular beam epitaxy. A dramatic lowering of the indirect bandgap, relative to that of unstrained bulk Ge-Si alloys, is observed. Our results for 0 < × < 0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge-Si heterostructures.

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MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES

  • D. V. LANG (a1), R. PEOPLE (a1), J. C. BEAN (a1) and A. M. SERGENT (a1)

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