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Measurement of The Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

S. Mirzakuchaki ,
H. Golestanian ,
E. J. Charlson  and
T. Stacy
S. Mirzakuchaki
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
H. Golestanian
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
E. J. Charlson
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
T. Stacy
Affiliation:
Electrical Engineering Department, University of Missouri, Columbia, MO 65211
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Abstract

Although many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 655
Copyright
Copyright © Materials Research Society 1996

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References

1. Gildenblat, G. Sh., Grot, S. A., and Badzian, A., Proc. IEEE 79, 647 (1991).Google Scholar
2. Geis, M. W., Efremow, N. N., and von Windheim, J. A., Appl. Phys. Lett. 63, 952 (1993).Google Scholar
3. Venkatesan, V., von Windheim, J., and Das, K., IEEE Transactions on Electron Devices 40, 1556 (1993).Google Scholar
4. Zhao, G., Stacy, T., Charlson, E. J., Charlson, E. M., Chao, C. H., Hajsaid, M., Meese, J., popovici, G., and Prelas, M., Appl. Phys. Lett. 61, 1119 (1992).Google Scholar
5. Okano, K., Kiyota, H., Iwasaki, T., Kurosu, T., lida, M., and Nakamura, T. in Proceedings Qf the 2nd International Conference on New Diamond Science and Technology, edited by Messier, R. et. al., (Washington, DC, 1990) pp. 917–922.Google Scholar
6. Okano, K., Kiyota, H., Iwasaki, T., Nakamura, Y., Akiba, Y., Kurosu, T., lida, M., and Nakamura, T., Appl. Phys. A 51, 344 (1990).Google Scholar
7. Bernholc, J., Kajihara, S., and Antonelli, A. in Proceedings of the 2nd International Conference on New Diamond Science and Technology, edited by Messier, R. et. al., (Washington, DC, 1990) pp. 923–928.Google Scholar
8. Ramesham, R., Ellis, C., and Roppel, T. in Proceedings of the First International Conference on the Applications of Diamond Films and Related Materials, edited by Tzeng, Y., Yoshikawa, M., Murakawa, M., and Feldman, A., (Elsevier, NY, 1991) pp. 411–416.Google Scholar
9. Geis, M., Proc. IEEE 79, 669 (1991).Google Scholar
10. Grot, S., Gildenblat, G., Hatfield, C., Wronski, C., Badzian, A., Badzian, T., and Messier, R., IEEE Electron Device Letters 11, 100 (1990).Google Scholar
11. Grot, S., Hatfield, C., Gildenblat, G., Badzian, A., and Badzian, T., Appl. Phys. Lett. 50, 1542 (1991).Google Scholar