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Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS

  • Y. Gao (a1), J. Kirchhoff (a1), S. Mitha (a1), J. W. Erickson (a1), C. Huang (a1) and R. Clark-Phelps (a1)...

Abstract

Secondary ion mass spectrometry (SIMS) and Rutherford Backscattering Spectrometry (RBS) techniques were used to determine InxGa1-xN and AlxGa1-xN compositions. While RBS is generally considered a quantitative technique for compositional analysis, SIMS has not been. We have applied a new analytical technique, which reduces the matrix effect in SIMS analysis, to accurately determine stoichiometry. The composition of InxGa1-xN (AlxGa1-xN) in the multiple layers and quantum well of the LED can be measured by SIMS, but is inaccessible to RBS.

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(1) Gao, Y., J. Appl. Phys. 64, 3760 (1988).
(2) Huang, C. et al. in these proceedings.

Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS

  • Y. Gao (a1), J. Kirchhoff (a1), S. Mitha (a1), J. W. Erickson (a1), C. Huang (a1) and R. Clark-Phelps (a1)...

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