Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-23T13:29:59.106Z Has data issue: false hasContentIssue false
  • English
  • Français

The Mbe Growth of Widegap II-VI Injection Lasers and LEDs

Published online by Cambridge University Press:  25 February 2011

W. Xie ,
D.C. Grillo ,
M. Kobayashi ,
R. L. Gunshor ,
H. Jeon ,
J. Ding ,
A. V. Nurmikko ,
G. C. Hua  and
N. Otsuka
W. Xie
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
D.C. Grillo
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
M. Kobayashi
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
R. L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, IN 47907
H. Jeon
Affiliation:
Division of Engineering and Department of Physics, Brown University, Providence, RI 02912
J. Ding
Affiliation:
Division of Engineering and Department of Physics, Brown University, Providence, RI 02912
A. V. Nurmikko
Affiliation:
Division of Engineering and Department of Physics, Brown University, Providence, RI 02912
G. C. Hua
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
Get access

Abstract

Striking progress in the development of II-VI semiconductor heterostructures, coupled with seminal advances in doping, has very recently led to the first demonstration of blue and blue/green diode lasers operating from cryogenic to room temperature. The active region in these devices was based on the (Zn, Cd)Se/ZnSe multiple quantum wells (MQW) which had earlier been actively studied as a candidate for laser medium by optical pumping techniques. We report on the performance of such MQW diode lasers with emphasis on structural versatility in terms of preparation on both p-type and n-type GaAs substrates, and where sulfur is or is not incorporated for blue/green color lasing. In this work we have obtained pulsed, high power, high quantum efficiency laser emission up to near room temperature conditions. Efficient LED devices are described which operate in the blue (494nm) at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 203
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, R. M., Troffer, M. B., Rouleau, C. M., DePuydt, J. M. and Alaase, M. A., Appl. Phys. Lett. 57, 2127 (1990).Google Scholar
2. Ohkawa, K., Karasawa, T., Mitsuyu, T., Japan J. of Appl. Phys. 30, L152 (1991).Google Scholar
3. Haase, M., Qiu, J., DePuydt, J. M., and Cheng, H., Appl. Phys. Lett. 59, 1273 (1991).Google Scholar
4. Jeon, H., Ding, J., Xie, W., Grillo, D. C., Patterson, W., Kobayashi, M., Gunshor, R. L., and Nurmikko, A. V., Appl. Phys. Lett. 59, Dec. 1991 Google Scholar
5. Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., and Gunshor, R. L., to be published.Google Scholar
6. Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Hua, G. C., Otsuka, N., Jeon, H., Ding, J., and Nurmikko, A. V., Appl. Phys. Lett. 60, Jan. 27, 1992.Google Scholar
7. Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C., and Otsuka, N., (to be published)Google Scholar
8. Mitsuyu, T., Ohkawa, K., and Yamazaki, O., (to be published).Google Scholar
9. Samarth, N., Luo, H., Furdyna, J. K., Alonso, R. G., Lee, Y. R., Ramdas, A. K., Qadri, S. B., Otsuka, N., Appl. Phys. Lett. 56(12), 1163 (1990).CrossRefGoogle Scholar
10. Otsuka, N., Hua, G. C., Xie, W., Grillo, D. C., Kobayashi, M., and Gunshor, R. L. (to be published elsewhere in this volume).Google Scholar
11. Newstead, S. M., Kerr, T. M., and Wood, C. E. C., J. Appl. Phys. 66, 4184 (1989).CrossRefGoogle Scholar
12. Matsumura, N., Tsubokura, M., Saraie, J., and Yodogawa, Y., J. Crystal Growth 86, 311 (1988)CrossRefGoogle Scholar
13. Matsumura, N., Tsubokura, M., Miyagawa, K., Nakamura, N., and Saraie, J., J. Crystal Growth 99, 446 (1990)CrossRefGoogle Scholar
14. Ohkawa, K., Mitsuyu, T., and Yamazaki, O., J. Appl. Phys. 62, 3216 (1987).Google Scholar
15. Cheng, H., DePuydt, J., Potts, J. and Haase, M., J. Cryst. Growth 95, 512 (1988).Google Scholar
16. Hwang, S., Ren, J., Bowers, K. A., Cook, J. W. Jr, and Schetzina, J. F., Mater. Res. Soc. Symp. Proc. 161, 133 (1990).CrossRefGoogle Scholar
17. Ding, J., Pelekanos, N., Nurmikko, A. V., Luo, H., Samarth, N., Furdyna, J., Appl. Phys. Lett. 57, 2885 (1990).Google Scholar
18. Jeon, H., Ding, J., Nurmikko, A.V., Xie, W., Kobayashi, M., and Gunshor, R. L., Appl. Phys. Lett. 60, Jan. 13, 1992.Google Scholar