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MBE Growth of GaInAsSb/A1GaAsSb Double Heterostructures for Diode Lasers Emitting Beyond 2 μm

Published online by Cambridge University Press:  25 February 2011

S.J. Eglash ,
H.K. Choi ,
G.W. Turner  and
M.C. Finn
S.J. Eglash
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
H.K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
G.W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
M.C. Finn
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173-9108
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Abstract

Molecular beam epitaxy has been used to grow GaInAsSb/AlGaAsSb double heterostructures, lattice matched to GaSb substrates, for diode laser emission at 2.3 μm. Doublecrystal x-ray diffraction measurements were used to determine alloy lattice constants, and photoluminescence and infrared absorption spectroscopies were used to determine the bandgaps of the GaInAsSb layers. Alloy compositions measured by Auger electron spectroscopy were consistent with measured lattice constants and bandgaps. Diode lasers fabricated from the double heterostructures were operated in the pulsed mode at room temperature with threshold current densities as low as 1.5 kA cm−2, differential quantum efficiencies as high as 50 percent, and output power as high as 900 mW per facet.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 207
Copyright
Copyright © Materials Research Society 1991

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References

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