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MBE Growth of GaAs on Si (100)

Published online by Cambridge University Press:  28 February 2011

J. S. Ahearn  and
P. Uppal
J. S. Ahearn
Affiliation:
Martin Marietta Laboratories, GAMMA Monolithics, 1450 South Rolling Road, Baltimore, MD 21227
P. Uppal
Affiliation:
Martin Marietta Laboratories, GAMMA Monolithics, 1450 South Rolling Road, Baltimore, MD 21227
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Abstract

Molecular beam epitaxy (MBE) growth of GaAs on Si was investigated for three Si substrate orientations: exact (100), 4° off (100) towards (011), and 4° off towards (010). Cross-sectional transmission electron microscopy (X-TEM) analysis indicated a high dislocation density at the GaAs-Si interface that decreased away from the interface. Changing the orientation significantly affected the dislocation arrangement in the films.

In the exact (100) case, dislocations from different glide systems formed pyramids, and dislocation annihilation resulted in linear defects propagating to the bottom of pits on the GaAs surface. On Si substrates oriented 4° off of (100), dislocation pyramids were not observed which we attribute to the different stresses acting on different glide systems. Planar TEM sections indicated that the dislocation densities at th surfaces of the 2-μm-thick films were 8 × 108 /cm2 for exact (100), 3.4 × 108/cm2 for 4° off (100) towards (010), and 1.6 × 108/cm2 for 4° off towards (011) orientations. When etching was used to evaluate anti-phase domain (APD) density, the exact (100) and off (100) orientations toward (010) showed APD's in some areas; off (100) toward (011) orientations were apparently APD-free. Results of photoluminescence (PL) spectroscopy of each of the wafers showed marked differences in peak intensities for the different orientations. Secondary ion mass spectrometry (SIMS) showed that roughly 1/4 of a monolayer of Si was incorporated in the GaAs, mostly concentrated in the first 250 nm near the GaAs-Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 167
Copyright
Copyright © Materials Research Society 1987

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