Skip to main content Accessibility help
×
Home

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

  • H. Noge (a1), H. Kano (a1), M. Hashimoto (a1) and I. Igarashi (a1)

Abstract

GaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950°C over 60 min or at 1000°C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2/Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3. Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, thzxcSe warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (p ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2. This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 μm-long gate reaches 88 mS/mm at 293 K.

Copyright

References

Hide All
1. Fischer, R., Morkog, H., Neumann, D.A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M., and Erickson, L.P., J. Appl. Phys. 60, 1640 (1986).
2. Kawabe, M. and Ueda, T., Jpn. J. Appl. Phys. 25, L285 (1986).
3. Ueda, T., Nishi, S., Kawarada, Y., Akiyama, M., and Kaminishi, K., Jpn. J. Appl. Phys. 25, L789 (1986).
4. Sakai, T., Soga, T., Takeyasu, M., and Umeno, M., in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M. (Mater. Res. Soc. Proc. 67, Pittsburgh, PA 1986) pp. 1526.
5. Metze, G.M., Choi, H.K., and Tsaur, B-Y., Appl. Phys. Lett. 45, 1107 (1984).
6. Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminishi, K., Jpn. J. Appl. Phys. 23, L919 (1984).
7. Fischer, R.J., Chand, N., Kopp, W.F., Peng, C-K., Morkoç, H., Gleason, K.R., and Scheitlin, D., IEEE Trans. Electron Devices ED–29, 206 (1986); M.I. Aksun, H. Morkog, L.F. Lester, K.H.G. Duh, P.M. Smith, P.C. Chao, M. Longerbone, and L.P. Erickson, Appl. Phys. Lett. 49, 1654 (1986).
8. Fischer, R., Henderson, T., Klem, J., Masselink, W.T., Kopp, W., Morkoç, H., and Litton, C.W., Electron. Lett. 20, 945 (1984); D.K. Arch, H. Morkoç, P.J. Vold, and M. Longerbone, IEEE Electron Device Lett. EDL-7, 635 (1986).
9. Sakai, S., Appl. Phys. Lett. 51, 1069 (1987).
10. Yao, T., Okada, Y., Kawanami, H., Matsui, S., Imagawa, A., and Ishida, K., in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B-Y. (Mater. Res. Soc. Proc. 91, Anaheim, CA 1987) pp. 6368.
11. Matyi, R.J., Shichijo, H., Moore, T.M., and Tsai, H-L., Appl. Phys. Lett. 51, 18 (1987).
12. Lee, H.P., Wang, S., Huang, Y-H., and Yu, P., Appl. Phys. Lett. 52, 215 (1988).
13. Soga, T., Sakai, S., Umeno, M., and Hattori, S., Jpn. J. Appl. Phys. 26, 252 (1987).
14. Choi, H.K., Turner, G.W., and Tsaur, B-Y., IEEE Electron Device Lett. EDL–7, 241 (1986).
15. Sakai, S., Matyi, R.J., and Shichijo, H., Appl. Phys. Lett. 51, 1913 (1987); J. Appl. Phys. 63, 1075 (1988).
16. Noge, H., Kano, H., Kato, T., Hashimoto, M., and Igarashi, I., J. Cryst. Growth 83, 431 (1987).
17. Sakamoto, T. and Hashiguchi, G., Jpn. J. Appl. Phys. 25, L78 (1986).
18. Kroemer, H., Polasko, K.J., and Wright, S.C., Appl. Phys. Lett. 36, 763 (1980); H. Kroemer, J. Vac. Sci. Technol. B5, 1150 (1987).
19. Inoue, N., Tanishiro, Y., and Yagi, K., Jpn. J. Appl. Phys. 26, L293 (1987).
20. Nakayama, T., Tanishiro, Y., and Takayanagi, K., Jpn. J. Appl. Phys. 26, L1186 (1987).
21. Kawanami, H., Hatayama, A., Nagai, K., and Hayashi, Y., Jpn. J. Appl. Phys. 26, L173 (1987).
22. Noge, H., Kano, H., Hashimoto, M., and Igarashi, I., to be published in J. Appl. Phys.
23. Soga, T., Hattori, S., Sakai, S., and Umeno, M., J. Cryst. Growth, 77, 498 (1986).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed