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MBE Growth of Epitaxial Calcium Fluoride on Silicon

Published online by Cambridge University Press:  26 February 2011

L. J. Schowalter  and
R. W. Fathauer
L. J. Schowalter
Affiliation:
General Electric Research and Development Center, P.O. Box 8, Schenectady, NT 12301; also
R. W. Fathauer
Affiliation:
School of Electrical Eng., Cornell university, Ithaca, NY 14853.
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Abstract

The growth of an epitaxial insulator such as CaF2. on Si substrates and ita subsequent overgrowth with epitaxial sen iconduct ors have a number of important applications in the electronics industry. In addition, it presents a unique opportunity to study an insulator/semiconductor interface under controlled conditions. We have studied the growth of epitaxial CaF. on Si substrates and their subsequent overgrowth with Si or Ge under various conditions. While epitaxial growth of CaF2, (which has an fee lattice structure as does Si) can be obtained on (100), (110) and (111) oriented Si substrates, the best quality crystal growth and surface morphology is obtained on (111) substrates as the CaF. (111) surface has the lowest free energy. Atomic steps on the original Si substrate surface are shown to have a detrimental effect on the epitaxial growth of CaF2. I-V measurements on the epitaxial (111) films show that the intrinsic breakdown field strength exceeds 2 MV/cm, however, high-field induced ionization can cause thermal breakdown at lower voltages. C-V measurements typically show ∼1012 states/cm in the Si band gap as grown. However, it is possible to reduce this number to less than 10 by annealing procedures after growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 285
Copyright
Copyright © Materials Research Society 1986

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References

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