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Mbe Growth and Thermoelectric Properties OF Bi2Te3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Sunglae Cho ,
Yunki Kim ,
Antonio DiVenere ,
George K. L. Wong ,
Jerry R. Meyer  and
John B. Ketterson
Sunglae Cho
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Yunki Kim
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Antonio DiVenere
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
George K. L. Wong
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
Jerry R. Meyer
Affiliation:
Code 5613, Naval Research Laboratory, Washington, D.C. 20375–5338
John B. Ketterson
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208
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Abstract

We have grown high quality Bi2Te3 thin films on CdTe(111)B substrates using MBE. Structural properties have been investigated using in-situ reflection high-energy electron diffraction (RHEED) and θ-2θ X-ray diffraction analysis. They show that Bi2Te3films on CdTe(111) grow along the (00.l) in the hexagonal cell with a layer-by-layer growth mode, resulting in a smooth surface, and an X-ray Bragg peak FWHM of 0.2°. The thermopower and electrical conductivity of the stoichiometric Bi2Te3 films were ∼200 μV/K and 103(Ωcm)−1, respectively, comparable to the single crystal bulk values. We have observed the antisite defect effect in Te-rich Bi2Te3films: excess Te occupies Bi lattice sites and behaves as an n-type dopant. Crystallinity and transport properties are strongly affected by non-stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 183
Copyright
Copyright © Materials Research Society 1999

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