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MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

  • J. B. Posthill (a1), D. P. Malta (a1), R. Venkatasubramanian (a1), P. R. Sharps (a1), M. L. Timmons (a1), R. J. Markunas (a1), T. P. Humphreys (a2) and N. R. Parikh (a3)...

Abstract

Investigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

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1. Shaw, D., Mater. Res. Soc. Symp. Proc. 91, 15 (1987).
2. Chand, N., Ren, F., Macrander, A. T., van der Ziel, J. P., Sergent, A. M., Hull, R., Chu, S. N. G., Chen, Y. K., and Lang, D. V., J. Appl. Phys. 67, 2343 (1990).
3. Posthill, J. B., Venkatasubramanian, R., Malta, D. P., Hattangady, S. V., Fountain, G. G., Tim-mons, M. L., and Markunas, R. J., Mater. Res. Soc. Symp. Proc. 198, 219 (1990).
4. Baribeau, J. M., Jackman, T. E., Houghton, D. C., Maigne, P., and Denhoff, M. W., J. Appl. Phys. 61, 5738 (1988).
5. Dupuis, R. D., Bean, J. C., Brown, J. M., Macrander, A. T., Miller, R. C., and Hopkins, L. C., J. Elect. Mater. 16, 69 (1987).
6. People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985).
7. Venkatasubramanian, R., Timmons, M. L., Posthill, J. B., Keyes, B. M., and Ahrenkiel, R. K., J. Cryst. Growth 107, 489 (1991).
8. Sharps, P. R., Timmons, M. L., and Colpitts, T. S., Appl. Phys. Lett. 58, 2006 (1991).
9. Malta, D. P., Posthill, J. B., Venkatasubramanian, R., Timmons, M. L., Humphreys, T. P., Das, K., and Markunas, R. J., Proc. XIIth Intl. Congress for Electron Microscopy, Eds. Peachey, L. D. and Williams, D. B., 4, 746 (1990).
10. Abrahams, M. S. and Buicchi, C. J., J. Appl. Phys. 36, 2855 (1965) [Part A and part B mixed in 1:1 ratio before use. A: 40ml HF, 40ml H2O, and 0.3g AgNO3; B: 40ml H2O and 40g CrO3].

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

  • J. B. Posthill (a1), D. P. Malta (a1), R. Venkatasubramanian (a1), P. R. Sharps (a1), M. L. Timmons (a1), R. J. Markunas (a1), T. P. Humphreys (a2) and N. R. Parikh (a3)...

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