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MBE Growth and Characterization of CdTe, ZnTe Epilayers and CdTe/ZnCdTe Superlattices on GaAs Substrates

  • A.E. Milokhin, I.E. Trofimov (a1), M.V. Petrov (a2), F.F. Balakirev (a3), V.D. Kuzmin, V.V. Kalinin (a4) and U.G. Sidorov (a3)...

Abstract

Semiconductor heterostuctures ZnxCd1−xTe/CdTe were found to be of interest recently due to their potential practical usage. The reason for this is the beautiful variety of electrical heterostucture properties which arise from the strong influence of elastic deformation distribution. Thin epilayer films and superlattices ZnxCd1−xTe/CdTe were prepared on GaAs semi-isolator substrates by MBE technology with RHEED oscillation measurements of the deposited layers. X-ray measurements have shown high crystalline quality of the samples.

We have performed Raman scattering studies of ZnxZnxCd1−xTe/CdTe structures. The data obtained were interpreted as a proff of the pseudomorphous growth model. That is, ZnxCd1−xTe/CdTe SLS keeps the lattice constant of the buffer layer.

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1. Jackson, M., Miles, R.H., McGill, T.C. and Faurie, J.P., Appl. Phys. Lett. 55, 786 (1989).
2. Menendez, J., Pinczuk, A., Valladares, J.P., Feldman, R.D., Austin, R.F., Appl. Phys. Lett. 50, 1101 (1987).
3. Monfroy, G., Sivananthan, S., Chu, X., Faurie, J.P., Knox, R.D., Staudenmann, J.L., Appl. Phys. Lett. 49, 152 (1986).
4. Feldman, R.D., Austin, R.F., Dayem, A.H., Westerwick, E.H., Appl. Phys. Lett. 49, 797 (1986).
5. Cibert, J., Gobil, Y., Dang, Le Si, Tatarenko, S., Feuillet, G., Jouneau, P.H., Saminadayar, K., Appl. Phys. Lett. 56, 292 (1990).
6. Kuzmin, V.D., to be published.
7. Golding, T.D., Qadri, S.B. and Dinan, J.H. J.Vac.Sci.Technol. A7, 616 (1989).
8.According to our calculations, the progressive downward shift with decreasing CdTe width is due to the phonon confinement. It can not be caused by stress, because in this case one would expect upward shift.
9. Gill, B., Bunstan, D.J., Calatayud, J., Mathieu, H., Faurier, J.P., Phys. Rev. B40, 5522 (1989).
10. Landolt-Bornstein Tables, edited by Madelung, O., Schulz, H. and Weiss, H. (Springer, Berlin 1982), vol.3,17b.
11. Olego, D.J., Raccah, P.M., Faurie, J.P., Phys.Rev. B33, 3819 (1986).

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MBE Growth and Characterization of CdTe, ZnTe Epilayers and CdTe/ZnCdTe Superlattices on GaAs Substrates

  • A.E. Milokhin, I.E. Trofimov (a1), M.V. Petrov (a2), F.F. Balakirev (a3), V.D. Kuzmin, V.V. Kalinin (a4) and U.G. Sidorov (a3)...

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