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Material Characterization Of Methyl Siloxane Sogs

  • Ken Numata (a1) (a2), Thomas R. Seha (a1), Shin-Puu Jeng (a1) and Tsuyoshi Tanaka (a3)

Abstract

Methyl siloxane spin-on-glass (SOG) is a conventional gap-filling material. In accordance with the requirement of low permittivity, many of major SOG suppliers are developing new types of methyl siloxane SOGs.

The most interesting property of these SOGs is their permittivity, which we measured by making stack structures of Al-0.5%Cu / TEOS CVD SiO2 / SOG / n+ Si. We also studied I-V characteristics, refractive indices, FT-IR spectra, stress, and moisture resistance.

All of the SOGs showed small stress and fair moisture resistance. Leakage currents were less than 2.5E-10 A/cm2 for bias voltages up to 5V. Permittivities ranged from 2.9 to 3.6. We observed a correlation between permittivity and FT-IR spectral features associated with Si-O-Si bonds. Reducing the number density of Si-O-Si bonds may be an effective way to lower the permittivity of this class of SOGs

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References

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1. Nakano, T., presented at Symposium “Interlayer Dielectrics Processing to Fabricate Multilevel Metallization Applied for the Next Generation ULSI”, Tokyo, Japan, 1994 (unpublished).
2. Leu, J., Lee, J.K., Liao, C.N., Kasthurirangan, J. and Ho, P.S., presented at the 1995 MRS Spring Meeting, San Francisco, CA, 1995 (unpublished)
3. Ip, Flora and Ting, Chiu, presented at the 1995 MRS Spring Meeting, San Francisco, CA, 1995 (unpublished).
4. Fukada, T. and Akahori, T., presented at the 1993 International Conference on Solid State Devices and Materials, Makuhari, Japan, 1993 (unpublished)
5. Usami, T., Shimokawa, K. and Yoshimura, M., Jpn. J. Appl. Phys. 33, 408 (1994).
6. Lipp, E. D. and Smith, A. Lee, in The Analytical Chemistry of Silicones, edited by Smith, A. Lee (Wiley Interscience, New York, 1991), p. 328.
7. Nishikida, K. and Iwamoto, R., Material Analysis by IR Method (in Japanese) (Kodansha, Tokyo, 1986), p. 229.

Material Characterization Of Methyl Siloxane Sogs

  • Ken Numata (a1) (a2), Thomas R. Seha (a1), Shin-Puu Jeng (a1) and Tsuyoshi Tanaka (a3)

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