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Material Characterization of Epitaxial GaAs and Ge Films on (100) Si Substrates

Published online by Cambridge University Press:  25 February 2011

M. Abdul Awal ,
El Hang Lee ,
G. L. Koos ,
E. Y. Chan ,
G. K. Celler  and
T. T. Sheng
M. Abdul Awal
Affiliation:
AT&T Engineering Reasearch Center, P.O. Box 900, Princeton, NJ 08540
El Hang Lee
Affiliation:
AT&T Engineering Reasearch Center, P.O. Box 900, Princeton, NJ 08540
G. L. Koos
Affiliation:
AT&T Engineering Reasearch Center, P.O. Box 900, Princeton, NJ 08540
E. Y. Chan
Affiliation:
AT&T Engineering Reasearch Center, P.O. Box 900, Princeton, NJ 08540
G. K. Celler
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
T. T. Sheng
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We report some results on the chemical, structural and electrical characterization of Ge and GaAs films, grown on Si (100) substrates by electron-beam evaporation and MOCVD, respectively. Good quality Ge films have been obtained at 700°C substrate temperature at a growth rate of 5 nm/sec in 5 × 10−7 torr. Similarly, good GaAs films were obtained at 650°C and at 0.3 nm/sec. RBS data for GaAs films (1.1 μm) show Xmin approaching 3.5%, and Ge films (1.5 μm) around 3.6%. Photoluminescence of the same films show peaks around 852 nm with FWHM of 14 meV. Cross-sectional TEM and etching show a near-exponential decrease in defect density away from the Ge/Si interface. Detailed characterization results of the S-R, I-V, C-V, and X-ray studies are also described.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 93
Copyright
Copyright © Materials Research Society 1986

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