Skip to main content Accessibility help
×
×
Home

Manufacturing of TFTs with High Deposition Rated Microcrystalline Silicon using Plasma Enhanced Chemical Vapor Deposition

  • Kyung-Bae Park (a1), Ji-Sim Jung (a2), Jong-Man Kim (a3), Myung-kwan Ryu (a4), Sang-Yoon Lee (a5) and Jang-Yeon Kwon (a6)...

Abstract

Microcrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4. Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350oC. The deposition rate in films was as high as 10Å/sec. This process produced ¥ìc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.

Copyright

References

Hide All
1 Joubert, P., Loisel, B., Chouan, Y., and Haji, L., J. Electrochem. Soc. 134, 2541 (1987)
2 Vepřek, S. and Marecek, V., Solid State Electronics, 11, 683 (1968).
3 French, I.D., Deane, S.C., Cabarrocas, P. Roca i, IDW'O1, Korea, 367370, (2001)
4 Demichelis, F., Crovini, G., Giorgis, F., Pirri, C.F. and Tresso, E., J. App. Phys. 79, 1730, (1996)
5 Tsai, C. C., in: Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1989), Vol. A, p. 123.
6 Solomon, I., Shirai, H., and Layadi, N., J. Non Cryst. Solids 164–166, 989 (1993).
7 Matsuda, A., Thin Solid Films, 337, 1 (1999).
8 Gerbi, J. E. and Abelson, J. R., J. Appl. Phys. 89, 1463 (2001).
9 Hamma, S., Colliquet, D., and Cabarrocas, P. Roca i,. MRS Symp. Proc. Series, Vol. 507, 505 (1998).
10 Koh, J., Ferlauto, A. S., Rovira, P. I., Wronski, C. R., and Collins, R. W., Appl. Phys. Lett. 75, 2286 (1999)
11 Morral, A. Fontcuberta i and Cabarrocas, P. Roca i, Thin Solid Films 383, 161 (2001).
12 Jung, J. S., Kwon, J. Y., Park, Y. S., Cho, H. S., Park, K. B., Huaxiang, Y. X., Xianyu, W. X. and Noguchi, T., J. Korean Phys. Soc., 45, S861 (2004)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed