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Magneto-Static Wave Oscillator-Based Integrated Magneto-Optic Bragg Cell Modulator*

Published online by Cambridge University Press:  10 February 2011

Jun Su  and
Chen S. Tsai
Jun Su
Affiliation:
Department of Electrical and Computer Engineering and Institute for Surface and Interface Sciences, University of California, Irvine, CA 92697
Chen S. Tsai
Affiliation:
Department of Electrical and Computer Engineering and Institute for Surface and Interface Sciences, University of California, Irvine, CA 92697
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Abstract

A novel magnetooptic (MO) Bragg cell modulator that utilizes a magnetostatic forward volume wave (MSFVW) oscillator is presented. The carrier frequency of the MSFVW signals involved in the MO interaction is tuned linearly from 2.112 to 3.274 GHz by increasing an external bias magnetic field from 2350 to 2900 Oe. Compared with a conventional magnetostatic wave (MSW) delay line-based MO Bragg cell modulator, the proposed modulator can provide significantly higher diffraction efficiency owing to reduction of insertion losses in the MSFVW oscillator. Furthermore, the oscillator-type MO modulator can be more easily integrated with other MMIC devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 535
Copyright
Copyright © Materials Research Society 1998

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References

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