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Magnetoresistance and Hall Effect Near the Metal-Insulator Transition of Cd1-xMnxSe

Published online by Cambridge University Press:  26 February 2011

Y. Shapira
Y. Shapira*
Affiliation:
Francis Bitter National Magnet Laboratory and the Department of PhysicsMassachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

A large magnetoresistance was observed in n-type Cdl-xMnxSe (x ≤ 0.10) at low temperatures. The concomitant changes in the Half coefficient as a function of H were also studied. These magnetotransport effects are caused by the s-d interaction. Some specific magnetoresistance mechanisms are discussed. The most likely dominant mechanisms are related to the giant spin splitting of the conduction band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 89: Symposium Q – Diluted Magnetic (Semimagnetic) Semiconductors , 1986 , 209
Copyright
Copyright © Materials Research Society 1987

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References

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