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Magnetization Process in Cr Substituted Diluted Magnetic Semiconductor Films

Published online by Cambridge University Press:  10 February 2011

N. Adachi ,
J. Hirano ,
T. Yamazaki ,
T. Okuda ,
H. Kitazawa  and
G. Kido
N. Adachi
Affiliation:
Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan, nadachi@mse.nitech.ac.jp
J. Hirano
Affiliation:
Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan, nadachi@mse.nitech.ac.jp
T. Yamazaki
Affiliation:
Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan, nadachi@mse.nitech.ac.jp
T. Okuda
Affiliation:
Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan, nadachi@mse.nitech.ac.jp
H. Kitazawa
Affiliation:
National Institute for Metals (NRIM), Physical Properties Division, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
G. Kido
Affiliation:
National Institute for Metals (NRIM), Physical Properties Division, 1-2-1 Sengen, Tsukuba, Ibaraki 305, Japan
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Abstract

Cr substituted dilute magnetic semiconductor Cd1-xCrxSe films were grown onto fused silica and sapphire (00 · 1) substrates by vapor deposition technique. The films with wurtzite structure were obtained at composition of 0 ≤ × ≤ 0.66. Saturation magnetization and magnetic susceptibility increased as x increased. In comparison with Mn-DMS system, the initial magnetization curves saturate easily. This tendency is different from most DMS materials in which magnetic ions interact with each other antiferromagnetically. It is possible that ferromagnetic interactions exist in Cd1-xCrxSe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 633
Copyright
Copyright © Materials Research Society 1998

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