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Magnetic Resonance Studies of Recombination Processes in GaN-Based Light Emitting Diodes

Published online by Cambridge University Press:  21 February 2011

W.E. Carlos ,
E.R. Glaser ,
T.A. Kennedy  and
S. Nakamura
W.E. Carlos
Affiliation:
Naval Research Laboratory, Washington, D.C.
E.R. Glaser
Affiliation:
Naval Research Laboratory, Washington, D.C.
T.A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, D.C.
S. Nakamura
Affiliation:
Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan.
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Abstract

Magnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 673
Copyright
Copyright © Materials Research Society 1996

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References

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