Skip to main content Accessibility help

Magnetic Properties of GaN Layers Implanted by Mn, Cr or V.

  • Vitaliy A. Guzenko (a1), Nicolas Thillosen (a1), Andre Dahmen (a1), Raffaella Calarco (a1), Thomas Schäpers (a1), Martina Luysberg (a2) and Lothar Houben (a2)...


We report on magnetic properties of the GaN layers implanted with 3d transition metal ions. GaN layers grown by MOVPE on sapphire substrates, p- or n-doped, were implanted by Mn, Cr or V ions with a dose of 5×1016 cm−2 and implantation energy of 200 keV. Subsequently, a rapid thermal annealing in nitrogen atmosphere for 5 minutes at different temperatures (700°C – 1050°C) was performed. The magnetization as a function of magnetic field as well as the dependence on temperature revealed paramagnetic behavior for all samples. In addition, an antiferromagnetic coupling between implanted ions was found.



Hide All
1. Ohno, H., Science 281, 951 (1998).
2. Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019 (2000).
3. Sato, K. and Katayama-Yoshida, H., Jap. J. Appl. Phys. 40, L485 (2001).
4. Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., Roberts, J. C., and Bedair, S. M., Appl. Phys. Lett. 79, 3473 (2001).
5. Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., and El-Masry, N. A., Mat. Lett. 51, 500 (2001).
6. Theodoropoulou, N., Hebard, A. F., Overberg, M. E., Abernathy, C. R., Pearton, S. J., Chu, S. N. G., and Wilson, R. G., Appl. Phys. Lett. 78, 3475 (2001).
7. Lee, J. S., Lim, J. D., Khim, Z. G., Park, Y. D., Pearton, S. J., and Chu, S. N. G., J. Appl. Phys. 93, 4512 (2003).
8. Baik, J. M., Kim, J. K., Jang, H. W., Shon, Y., Kang, T. W., and Lee, J.-L., Phys. Stat. Sol. B 234, 943 (2002).
9. Graf, T., Gjukic, M., Hermann, M., Brandt, M. S., Stutzmann, M., Görgens, L., Philipp, J. B., and Ambacher, O., J. Appl. Phys. 93, 9697 (2003).
10. Zając, M., Gosk, J., Kaminska, M., Twardowski, A., Szyszko, T., and Podsiadlo, S., Appl. Phys. Lett. 79, 2432 (2001).
11. Dhar, S., Brandt, O., Trampert, A., Daweritz, L., Friedland, K. J., Ploog, K. H., Keller, J., Beschoten, B., and Güntherodt, G., Appl. Phys. Lett. 82, 2077 (2003).
12. Rennie, J., Onomura, M., Nunoue, S.-Y., Hatakoshi, G.-I., Sugawara, H., and Ishikawa, M., J. Cryst. Growth 189–190, 711 (1998).
13. Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Pashkova, N. Y., Shlensky, A. A., Pearton, S. J., Overberg, M. E., Abernathy, C. R., Zavada, J. M., and Wilson, R. G., J. Appl. Phys. 93, 5388 (2003).
14. Guzenko, V.A., Thillosen, N., Dahmen, A., Calarco, R., Schäpers, Th., Houben, L. and Luysberg, M., Kaluza, A., and Schineller, B. (to be published).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed