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Magnetic and Electronic Properties of n-type (Al,Ga) co-doped Zn(Cu)O based Dilute Magnetic Semiconductors

Published online by Cambridge University Press:  01 February 2011

Deepayan Chakraborti ,
John T. Prater  and
Jagdish Narayan
Deepayan Chakraborti
Affiliation:
dchakra@ncsu.edu, North Carolina State University, Materials Science and Engineering, Room#3030,Engineering Bldg-I,, 911 Partners Way, Raleigh, NC, 27606, United States, 919-515-7219, 919-515-7724
John T. Prater
Affiliation:
john.t.prater@us.army.mil, North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27606, United States
Jagdish Narayan
Affiliation:
j_narayan@ncsu.edu, North Carolina State University, Materials Science and Engineering, Raleigh, NC, 27606, United States
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Abstract

Systematic studies on the epitaxial growth and the effect of n-type (Al,Ga) doping on the magnetic and electrical properties of 2.0 % Cu doped ZnO dilute magnetic semiconducting thin films deposited on c-plane sapphire single crystals by pulsed laser deposition are reported here. An decrease in more than 3 orders of magnitude in resistivity from 2×101 Ohm cm for the 2.0 % Cu doped ZnO to ~5×10-3 Ohm cm for Al and Ga codoped films is observed. This increase in conductivity does not show any effect on ferromagnetic ordering thus contradicting the claim of free carrier mediated exchange as being responsible for ferromagnetic ordering in these DMS systems. A bound magnetic polaron or F-center mediated exchange is a possible explanation for the origin of ferromagnetism in these ZnO based DMS thin films.

Keywords

ferromagneticspintronicmagnetic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 999: Symposium K – Novel Semiconductor Materials for Room-Temperature Ferromagnetism , 2007 , 0999-K03-02
Copyright
Copyright © Materials Research Society 2007

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