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Macroscopic Stress and Device Reliability of 1.3μm and 1.5μm Wavelength GaInAsP Channeled Substrate Buried Heterostructure Lasers

Published online by Cambridge University Press:  16 February 2011

V. Swaminathan ,
L. A. Koszi  and
M. W. Focht
V. Swaminathan
Affiliation:
AT&T Bell Laboratories, Solid State Technology Center, Breinigsville, PA 18031
L. A. Koszi
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. W. Focht
Affiliation:
AT&T Bell Laboratories, Solid State Technology Center, Breinigsville, PA 18031
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Abstract

The macroscopic stress of 1.3μm and 1.5μm wavelength GaInAsP-InP channeled substrate buried heterostructure lasers is related with device reliability. The radius of curvature, R, of the device is taken as a measure of its macroscopic stress and the change in dc threshold current, ΔIth, after an accelerated aging test is taken as a measure of device reliability, with high ΔIth, indicating decreased reliability. R or ΔIth was changed by altering the p-side contact width or the p-side Au bonding pad thickness. No correlation was found between R and ΔIth. For example, changing the p-contact width from 6 to 125μm resulted in a reduction of ΔIth by a factor of 2 – 10 among the wafers studied. However, the change in the active layer stress, as determined by R−1, was at most only 25%. Similarly, increasing the Au bonding pad thickness from 0.6 to 9.0μm increased the active layer stress by a factor of 2, but with little change in Alt. It is concluded that the macroscopic stress does not affect device reliability for the GaInAsP lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 199
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Hartman, R. L. and Hartman, A. R., Appl. Phys. Lett. 23, 147 (1973)10.1063/1.1654838Google Scholar
[2] Olsen, G. H. and Ettenberg, M., J. Appl. Phys. 48, 2543 (1977).10.1063/1.323970Google Scholar
[3] Wakefield, B., J. Appl. Phys. 50, 7914 (1979).10.1063/1.325965Google Scholar
[4] Robertson, M. J., Wakefield, B., and Hutchinson, P., J. Appl. Phys. 52, 4462 (1981).10.1063/1.329372Google Scholar
[5] Swaminathan, V., Lopata, J. and Lee, J. W., Mat. Res. Soc. Symp. Proc. 77, 779 (1987).10.1557/PROC-77-779Google Scholar
[6] Dautremont-Smith, W. C. and Woelfer, S. M., Appl. Phys. Lett. 47, 31 (1985).10.1063/1.96438Google Scholar
[7] Swaminathan, V., Wagner, W. R., Anthony, P. J., Henein, G. and Koszi, L. A., J. Appl. Phys. 54, 3763 (1983).10.1063/1.332592Google Scholar
[8] Rozgonyi, G. A. and Ciesielka, T. J., Rev. Sci. Instrum; 44, 1053 (1973).10.1063/1.1686299Google Scholar
[9] Wilt, D. P., Long, J., Dautremont-Smith, W. C., Focht, M. W., Shen, T. M. and Hartman, R. L., Electron. Lett. 22, 869 (1986).10.1049/el:19860594Google Scholar
[10] Gordon, E. I., Nash, F. R. and Hartman, R. L., IEEE Electron Device Lett. EDL 4, 465 (1983).10.1109/EDL.1983.25804Google Scholar
[11] Focht, M. W. and Koszi, L. A., Flynn, E. J. and Anthony, P. J., unpublished.Google Scholar
[12] Timoshenko, S., J. Opt. Soc. Am., 11, 23 (1925).10.1364/JOSA.11.000233Google Scholar
[13] Adachi, S., J. Appl. Phy., 53, 8775 (1982).10.1063/1.330480Google Scholar
[14] Girifalco, L. A. and Welch, D. D. in Point Defects and Diffusion in Strained Metals, (Gordon and Brech, New York, 1967) p. 39.Google Scholar
[15] Van Vechten, J. A., J.Electrochem. Soc. 122, 419 (1975).10.1149/1.2134226Google Scholar
[16] Hurle, D. T. J., J. Phys. Chem. Solits, 40, 613 (1979).10.1016/0022-3697(79)90170-7Google Scholar
[17] Diffusion in Solids by Shewmon, P. G., (McGraw-Hill, New York 1963) p. 23, 467 (1958).Google Scholar
[18] Kimerling, L. C., Solid State Electronic 21, 1391 (1978).10.1016/0038-1101(78)90215-0Google Scholar
[19] Kishino, S., Chinone, N., Nakashima, H. and Ito, R., Appl. Phys. Lett. 29, 489 (1976).10.1063/1.89132Google Scholar