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Low-Voltage Pb(Zr,Ti)O3 Film Capacitors: Control of Charge Relaxation at the Interfaces

Published online by Cambridge University Press:  10 February 2011

I. Stolichnov ,
A. Tagantsev ,
S. Gentil ,
S. Hiboux ,
P. Muralt ,
N. Setter ,
J. S. Cross  and
M. Tsukada
I. Stolichnov
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
A. Tagantsev
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
S. Gentil
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
S. Hiboux
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
P. Muralt
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
N. Setter
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
J. S. Cross
Affiliation:
Fujitsu Laboratories, Ltd., 10–1 Morinosato-wakamiya, Atsugi, 243–0197Japan
M. Tsukada
Affiliation:
Fujitsu Laboratories, Ltd., 10–1 Morinosato-wakamiya, Atsugi, 243–0197Japan
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Abstract

It is suggested that the processes of charge injection and entrapment at the interfacial layer of Pb(Zr,Ti)O3 (PZT) film capacitors are responsible for both polarization fatigue and size effects on ferroelectric switching. The study of the charge injection by analyzing the dependence of coercive field on maximum polarization shows that there is a direct relationship between the charge injection properties and fatigue performance. Based on our results, we conclude that enhancement of charge relaxation at the interfaces of PZT capacitors results in two positive effects: improvement of polarization fatigue performance and suppression of size effects on ferroelectric switching, which are detrimental for low-voltage PZT film capacitors.

This idea has been implemented experimentally by introducing a thin RuO2 layer into the top-electrode interface of the Pt/PZT/Pt capacitor. PZT film capacitors of 100–170 nm thickness prepared in this way exhibited substantially improved fatigue in combination with weak size effects, which allows reduction of the operation voltage down to 0.8 V without degradation of the hysteresis properties. Our results show that the control of charge relaxation at the interface is a key issue for development of the low-voltage ferroelectric capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 387
Copyright
Copyright © Materials Research Society 2000

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