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Low-Temperature Pecvd Si3N4 Films for GaAs Encapsulation and Passivation.

Published online by Cambridge University Press:  21 February 2011

R. L. Pfeffer ,
G. J. Gerardi ,
R. A. Lux ,
K. A. Jones ,
E. H. Poindexter ,
W. H. Chang  and
R. A. B. Devine
R. L. Pfeffer
Affiliation:
US Army ETDL, Fort Monmouth, NJ 07703
G. J. Gerardi
Affiliation:
US Army ETDL, Fort Monmouth, NJ 07703
R. A. Lux
Affiliation:
US Army ETDL, Fort Monmouth, NJ 07703
K. A. Jones
Affiliation:
US Army ETDL, Fort Monmouth, NJ 07703
E. H. Poindexter
Affiliation:
US Army ETDL, Fort Monmouth, NJ 07703
W. H. Chang
Affiliation:
US Army ETDL, Fort Monmouth, NJ 07703
R. A. B. Devine
Affiliation:
On leave from Centre National d'Etudes des Telecommunications, Meylan, France
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Abstract

We have begun a detailed study of the physical properties of Si3 N4 films deposited at low temperatures using a PECVD process based on dilution of reactive gases with inert carrier gas [1] in order to investigate their feasibility for use as post-implant encapsulants and/or device passivation layers for GaAs. The films and substrates are analyzed by ion channeling, ellipsometry, IR spectrometry, ESR, RBS, and SEM to evaluate implantationinduced substrate and interface damage as well as the films’ optical properties, surface morphology, stoichiometry, uniformity, stress, and electrical trapping characteristics. Following furnace or RTA annealing they are recharacterized, adding SIMS to evaluate As diffusion into the films. Both Schottky and ohmic contacts are then formed and used to measure Hall mobility, trap density and 1/f noise. Preliminary results of these studies are presented and compared with those obtained using other techniques such as wafer-to-wafer As entrapment, arsine overpressure, or conventional CVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 227
Copyright
Copyright © Materials Research Society 1990

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