Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T10:55:08.222Z Has data issue: false hasContentIssue false
  • English
  • Français

LOW-Temperature Epitaxial Growth of GaAs on Si Substrates by MBE

Published online by Cambridge University Press:  25 February 2011

Ting-Yen Chiang ,
En-Huery Liu ,
Der-Hwa Yiin  and
Tri-Rung Yew
Ting-Yen Chiang
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
En-Huery Liu
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Der-Hwa Yiin
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Get access

Abstract

This paper presents results of the low—temperature epitaxial growth of GaAs on Si substrates with orientation 1°—4° off (100) by molecular beam epitaxy (MBE). The epitaxial growth ·is carried out on Si wafers subjected to HF solution treatment by “spin-etch” technique before the wafer is transferred to the entry chamber of MBE system. Methods used for reducing defect density in the epitaxial layers are proposed. The characterization techniques include cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, scanning electron microscopy (S EM), and double crystal X-ray diffraction (DCXRD). Epitaxial films with a full width at half—maximum (FWHM) of about 310 arcsec measured by DCXRD are obtained without annealing.-

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 125
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shichijo, H. and Lee, J. W., Mat. Res. Soc. Symp. Proc., 67, 173 (1986)Google Scholar
2. Choi, H. K., Turner, G. W., and Tsaur, B. Y., IEEE Electron Device Lett., EDL–7, 271 (1986)Google Scholar
3. Fang, S. F., Salvador, A., and Morkoc, H., Appl. Phys. Lett., 58, 1887 (1991)Google Scholar
4. Rao, T. Sudersena, Nozawa, K., and Horikoshi, Y., Appl. Phys. Lett., 60, 1606 (1992)Google Scholar
5. Grunthaner, F. J. and Grunthaner, D. J., Mat. Sci. Rep., 1, 65 (1986)Google Scholar
6. Chabal, Y. J., Higashi, G. S., Raghavachari, K., and Burrows, V. A., J. Vac. Sci. Technol., A7, 2104 (1989)Google Scholar
7. Chiang, T. Y., Yiin, D. H., Liu, E. H., and Yew, T. R., Submitted to Appl. Phys. Lett. (1992)Google Scholar