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Low-Temperature Direct-Oxidation of Si Using Activated Oxygen Generated by Tungsten Catalytic Reaction

Published online by Cambridge University Press:  10 February 2011

Manabu Kudo ,
Akira Izumi  and
Hideki Matsumura
Manabu Kudo
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, Japan, mkudou@jaist.ac.jp
Akira Izumi
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, Japan, mkudou@jaist.ac.jp
Hideki Matsumura
Affiliation:
JAIST(Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, Japan, mkudou@jaist.ac.jp
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Abstract

Ultra-thin silicon dioxide films can be formed at temperatures as low as 220°C by direct oxidation of Si, using active oxygen species generated by tungsten catalytic reaction in a catalytic chemical vapor deposition (Cat-CVD) system. The structural and electrical properties of such a films are investigated. It is found that the density of Si atoms in intermediate oxidation states and the density of films determined from etch rate in dilute HF solution were comparable to those of the films by a conventional thermal oxidation at 900°C. The electrical properties, breakdown electric field and leakage current were also comparable to those of thermally oxidized films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 207
Copyright
Copyright © Materials Research Society 2000

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References

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