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Low-Temperature Diffusivity of Hydrogen in Different Silicon Substrates

Published online by Cambridge University Press:  26 February 2011

Xiaojun Deng  and
Bhushan L. Sopori
Xiaojun Deng
Affiliation:
Current address: Washington State University, Electronic Materials Laboratory, 100 Sprout Road, Richland, WA
Bhushan L. Sopori
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

The diffusivity of deuterium (D) at 250°C was determined in silicon samples grown by different techniques. It is found that the diffusivity increases with the growth speed, increase in carbon content and a decrease in oxygen concentration of the substrate. These growth conditions correlate well with the concentration of vacancy-type defects in the as-grown state. Hence, we conclude that a vacancy mechanism is responsible for low-temperature hydrogen diffusion in silicon. The highest diffusivity for hydrogen, calculated from these data, was found to be 3 × 10−7 cm2/s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 359
Copyright
Copyright © Materials Research Society 1995

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