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Low-Frequency Dielectric Properties of Sol-Gel Derived BaTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Su-Jae Lee ,
Kwang-Yong Kang ,
Jin-Woo Kim ,
Seok Kil Han  and
Sang-Don Jeong
Su-Jae Lee
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Koreasjlee@utopia.etri.re.kr
Kwang-Yong Kang
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea
Jin-Woo Kim
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea
Seok Kil Han
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea
Sang-Don Jeong
Affiliation:
Research Department, Electronics and Telecommunications Research Institute, Taejon, 305-350, Korea
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Abstract

Ferroelectric BaTiO 3 thin films with perovskite structure were grown by sol-gel spin-on processing onto (111)Pt/Ti/SiO2/Si substrates. In order to investigate the effects of space charge in BaTiO3 thin films, we measured the relative dielectric constant and the ac conductivity of the films as a function of frequency, ac oscillation amplitude and temperature. Dielectric constant and dielectric loss were 147 and 0.03 at 100 kHz, respectively. Also, BaTiO3 thin films exhibited marked dielectric relaxation above the Curie temperature and in the low frequency region below 100 Hz. This low frequency dielectric relaxation is attributed to the ionized space charge carriers such as oxygen vacancies and defects in BaTiO3 film and the interfaical polarization. The thermal activation energy for the relaxation process of the ionized space charge carriers was 0.72 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 495
Copyright
Copyright © Materials Research Society 1999

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References

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