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A Low-Cost BiCMOS Process with Metal Gates

  • H.W. van Zeijl (a1) and L.K. Nanver (a1)

Abstract

A low-complexity and low-cost double-metal BiCMOS process is proposed with only 13 mask steps. By decoupling the source-drain thermal budget from gate-stack formation, metal gates are realizable.

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1 Meijer, G. C. M., Concepts and focus point for intelligent sensor systems, Sensor and Actuators A, 41–42 1994 p. 183191
2 Zeijl, H. W. van and Nanver, L.K., Characterization of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization. ISICT Beijing 1998, p 98101

A Low-Cost BiCMOS Process with Metal Gates

  • H.W. van Zeijl (a1) and L.K. Nanver (a1)

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